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S16MD01/S16MD02/S26MD01/S26MD02
S16MD01/S16MD02 S26MD01/S26MD02
s Features
1. Compact 8-pin dual-in-line package type 2. RMS ON-state current IT : 0.6Arms 3. Built-in zero-cross circuit (S16MD02 / S26MD02 ) 4. High repetitive peak OFF-state voltage S16MD01 / S16MD02 VDRM : MIN. 400V S26MD01 / S26MD02 VDRM : MIN. 600V 5. Isolation voltage between input and output ( Viso : 4,000Vrms ) 6. Recognized by UL, file No. E94758 7. Approved by CSA No. LR63705
8-Pin DIP Type SSR for Low Power Control
s Outline Dimensions
Internal connection Diagram 8 6 5 g Zero-cross circuit 1 2 3 4 2.54 0.25 8 A Anode mark 1 2 9.66 3
0.5
( Unit : mm )
1 2 3 4 5 6 8 Cathode Anode Cathode Cathode G T1 T2
6
5 6.5 0.5 4 1.2 0.3
A (Model No.) S16MD01 S16MD02 S26MD01 S26MD02
s Applications
1. Oil fan heaters 2. Microwave ovens 3. Refrigerators
7.62 0.3 0.5TYP. 3.5 0.5
3.4 0.5
s Model Line-ups
For 100V lines No built-in zerocross circuit Built-in zerocross circuit S16MD01 S16MD02 For 200V lines S26MD01 S26MD02
3.1 0.5
0.5 0.1
0.26 0.1 : 0 to 13
g Zero-cross circuit for S16MD02 and S26MD02
Terminal 1 , 3 and 4 are common ones of cathode. To radiate the heat, solder all of the lead pins on the pattern of PWB.
s Absolute Maximum Ratings
Parameter Forward current Input Reverse voltage RMS ON-state current *1 Peak one cycle surge current Output S16MD01 / S16MD02 Repetitive peak OFFstate voltage S26MD01 / S26MD02 *2 Isolation voltage Operating temperature Storage temperature *3 Soldering temperature
*1 50Hz sine wave *2 AC for 1 minute, 40 to 60% RH, f = 60Hz *3 For 10 seconds
( Ta = 25 C)
Symbol IF VR IT I surge V DRM V iso T opr T stg T sol Rating 50 6 0.6 6 400 600 4 000 - 25 to + 80 - 40 to + 125 260 Unit mA V A rms A V V V rms C C C
" In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device."
S16MD01/S16MD02/S26MD01/S26MD02 s Electrical Characteristics
Input Parameter Forward voltage Reverse current Repetitive peak OFF-state current ON-state voltage Holding current Critical rate of rise of OFF-state voltage S16MD02 Zero-cross voltage S26MD02 Minimum trigger current Isolation resistance S16MD01 S26MD01 Turn-on time S16MD02 S26MD02 Symbol VF IR I DRM VT IH dV/dt Vox I FT R ISO t on Conditions IF = 20mA VR = 3V VDRM = Rated IT = 0.6A VD = 6V VDRM = ( 1/ 2 ) * Rated Resistance load IF = 15mA VD = 6V, R L = 100 DC500V, 40 to 60 % RH VD = 6V, R IF = 20mA
L
( Ta = 25C )
MIN. 100 5 x 1010 TYP. 1.2 1011 MAX. 1.4 10 100 3.0 25 35 10 100 50 Unit V A A V mA V/ s V mA s s
Output
Transfer characteristics
= 100
Fig. 1 RMS ON-state Current vs. Ambient Temperature
0.8 0.7 RMS ON-state current I F ( Arms ) 0.6 0.5 0.4 0.3 0.2 0.1 0 - 25
Fig. 2 Forward Current vs. Ambient Temperature
60
50 Forward current I F ( mA )
40
30
20
10
0
25 40 50 Ambient temperature T
a
75 80 ( C )
100
0 - 25
0
25 50 55 75 80 Ambient temperature T a ( C )
100
Fig. 3 Forward Current vs. Forward Voltage
50C 25C 0C 200 100 Forward current I F ( mA ) 50
Fig. 4 Minimum Trigger Current vs. Ambient Temperature ( S16MD01/S16MD02 )
12 Minimum trigger current I FT ( mA ) VD = 6V RL= 100
Ta =- 25 C
10
- 25C
8
S16MD01
20 10 5
6
S16MD02
4
2 1 0
2
0.5
1.0 1.5 2.0 2.5 Forward voltage V F ( V )
3.0
0 - 30
0 20 40 60 80 Ambient temperature T a ( C )
100
S16MD01/S16MD02/S26MD01/S26MD02
Fig. 5 Minimum Trigger Current vs. Ambient Temperature ( S26MD01/ S26MD02)
12 VD = 6V RL= 100 ON-state voltage VT ( V )
Fig. 6 ON-state Voltage vs. Ambient Temperature
1.4 I T = 0.6A
Minimum trigger current I FT ( mA )
10
1.3
8 S26MD01 6 S26MD02 4
1.2
1.1
1.0
2
0.9
0 - 30
0 20 40 60 80 Ambient temperature T a ( C )
100
0.8 - 30
0 20 40 60 80 Ambient temperature T a ( C )
100
Fig. 7 Relative Holding Current vs. Ambient Temperature
Relative holding current I H ( tC ) / I H ( 25C ) x 100% V D = 6V 103
Fig. 8 ON-state Current vs. ON-state Voltage
1.2 I F = 20mA T a = 25C 1.0 ON-state current I T ( mA )
0.8
0.6
102
0.4
0.2 101 - 30
0 20 40 60 80 Ambient temperature T a ( C )
100
0 0
0.5 1.0 ON-state voltage V T ( V )
1.5
Fig. 9 Turn-on Time vs. Forward Current ( S16MD01)
100 VD = 6V RL= 100 T a = 25C Turn-ON time t on ( s )
Fig.10 Turn-on Time vs. Forward Current (S26MD01 )
200 VD = 6V RL= 100 T a = 25C Turn-ON time t on ( m s ) 100
50 40 30
50 40 30
20
10 10
20 30 40 50 Forward current I F ( mA )
100
20 10
20 30 40 50 Forward current I F ( mA )
100
S16MD01/S16MD02/S26MD01/S26MD02
Fig.11 Turn-on Time vs. Forward Current (S16MD02/S26MD02 )
20 VD = 6V RL= 100 T a = 25C 10 Zero-cross voltage VOX ( V ) Turn-on time t on ( s )
Fig.12 Zero-cross Voltage vs. Ambient Temperature (S16MD02/S26MD02 )
Load : R I F = 15mA 25
5 4 3
20
2 10
20 30 40 50 Forward current I F ( mA )
100
15 - 30
0 20 40 60 80 Ambient temperature T a ( C )
100
s Basic Operation Circuit
R1 + VCC D1 3 VI Tr1 ZS : Surge absorption circuit 2 SSR 6 8 ZS Load AC 100V (S16MD01/S16MD02) AC 200V (S26MD01/S26MD02)
( 1 ) DC Drive AC supply voltage Input signal Load current ( for resistance load)
( 2 ) Pulse Drive
( 3 ) Phase Control
Notes 1 ) If large amount of surge is loaded onto V CC or the driver circuit, add a diode D 1 between terminal 2 and 3 to prevent reverse bias from being applied to the infrared LED. 2 ) Be sure to install a surge absorption circuit. An appropriate circuit must be chosen according to the load ( for CR, choose its constant ) . This must be carefully done especially for an inductive load. 3 ) For phase control, adjust such that the load current immediately after the input signal is applied will be more than 30mA.
s Precautions for Use
1 ) All pins must be soldered since they are also used as heat sinks ( heat radiation fins) . In designing, consider the heat radiation from the mounted SSR. 2 ) For higher radiation efficiency that allows wider thermal margin, secure a wider round pattern for Pin No.8 when designing mounting pattern. The rounded part of Pin No.5 ( gate ) must be as small as possible. Pulling the gate pattern around increases the change of being affected by external noise. 3 ) As for other general cautions, refer to the chapter"Precautions for Use"

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